Abstract
ZnO crystals were grown on Zn-polar ZnO substrates by cold-wall chemical vapor transport (CWCVT) using a mixture of Ar, H2O, and CO2 gases. A high growth rate of 125 µm/h was achieved by reducing the amount of excess Zn vapor in a graphite crucible, in which ZnO crystal growth was carried out. The increase in CO2 partial pressure prevents oxygen deficiency and improves the structural and electrical properties of ZnO crystals. The electron concentration and Hall mobility of the ZnO crystal grown at the CO2 partial pressure of 230 Torr were 7×1016 cm-3 and 190 cm2 V-1 s-1, respectively.
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