Abstract
The comparative deposition of ZnO:Ga layers by the magnetron sputtering of a ZnO:Ga (3 mol %) ceramic target and a composite ZnO:Ga(3 mol %)–Zn(20 wt %) cermet target is performed in the direct current mode at substrate temperatures of 50°С and 200°С. Studies of the formation processes, structure, and functional characteristics of the layers obtained by the sputtering of targets of both types in an atmosphere of argon showed that an increase in the zinc content in the reagent flux upon heating of the substrate to 200°С promotes improvement in the structural perfection of the layers and conductivity accompanied with the preservation of a high coefficient of optical transmittance.
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