ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Usman Bature Isyaku,M A Zakariya,Furqan Zahoor,Mohd Haris Bin Md Khir,I Md Nawi

doi:10.1109/access.2021.3098061

Usman Bature Isyaku, M A Zakariya + Show 3 more

Open Access

https://doi.org/10.1109/access.2021.3098061

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Abstract

Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

Highlights

Semiconductor memory is an essential element to numerous modern automated devices, ranging from devices used in computing podiums like handheld devices to supercomputers; all employ temporary or permanent memory systems for information and data storage [1], [2]
Several native point defects associated with the Zinc oxide (ZnO) structure hinder its material characteristics
The genesis of conductivity in ZnO n-type is the manifestation of VO and zinc interstitials

Summary

Introduction

Semiconductor memory is an essential element to numerous modern automated devices, ranging from devices used in computing podiums like handheld devices to supercomputers; all employ temporary or permanent memory systems for information and data storage [1], [2]. Memories are divide into two; volatile memory that lost its content when the control is switched off, and nonvolatile memory (NVM) that is proficient in regulating or limiting the flow of electrical current, maintaining its internal resistance, an applied. After power is turned off, it can retain its content, offering a new memory device’s trend that acts as a bistable memory with non-destructive read-out features. Numerous NVM devices have emerged, such as the flash memory [6], and emerging memories like the magnetic RAM (MRAM) [7], phase-change memory (PCM) [8], Spin-transfer torque RAM (STT-RAM) [9], ferroelectric memory (FeRAM) [10] and resistive RAM (RRAM) [11], each having some technical limitations in reliability, scalability, endurance, power consumption, retention and operating speed. Resistive switching (RS) memories possess better switching advantages, good candidates for future next-generation memories [12], [13]

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