Abstract
A comparative study is reported on p-NiO∕i-ZnO∕n-ITO and n-ITO∕i-ZnO∕p-NiO heterostructure ultraviolet sensors. In comparing reverse-bias current-voltage characteristics, dark current transients, and dark-current field dependence of both diodes, we observed that thermal and Poole–Frenkel generation currents dominate in the leakage. The difference in the leakage level and field dependence essentially depends on the p-i interface. Analysis of forward-bias current-voltage characteristics identifies the difference in Schottky barrier height between two diodes, which causes the difference in the contact leakage level as well. Furthermore, the p-i-n diode has better performance in photosensitivity and responsivity due to less optical loss in the top contact, and both diodes are promising for low levels of ultraviolet detection.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
