Abstract
This letter reports the development of a ZnO-based one diode-one resistor (1D1R) device consisting of a Pt/ZnO:Al/ZnO/Pt Schottky-type diode and a Pt/ZnO/Pt memristor using a room-temperature sputtering process. The proposed 1D1R device exhibits stable switching for more than 103 cycles, good retention up to 104 s at 85 °C, and desirable anti-crosstalk characteristics. Thus, the proposed design shows potential for integration in a crossbar memory array.
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