Abstract
In this work, we reported on the effect of adjusted technical conditions on device morphology including inorganic semiconductor ZnO and the obtained active layers. Specifically, by different concentrations of sol–gel precursors and various hydrothermal time, density and length of ZnO nanorods were controlled; then the stacking of polymer chains was regulated with the thermal treatment temperature; and hole transporting property of PEDOT:PSS was adjusted with different spin-coating layers. Through a series of technical control, the cell devices performance was improved to 1.44% under 100 mW cm−2 step by step. The intrinsic mechanisms about charge separation, transport, and recombination kinetics were systematically discussed by various optical and electrochemical techniques.
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