Abstract
In this present work, we plan for the first time an all-oxide solar cell and ambient light sensors constructed onto n-type semiconductor zinc oxide along with p-type material having extrinsic type of semiconductor Co3O4 nanowires. The perpendicular ZnO nanorods are dense and are working like scattering layer used for the visible light, even though Co3O4 nano material acting as a visible-light absorber directly. Characterization by SEM, AFM, TEM, XRD, EDS, Optical transmittance, J–V curve. The p-n junction based on metal oxides can operate both such as a photovoltaic (PV) device and a visible light photodetector. The photovoltaic parameters measured beneath simulated sunlight, demonstrating for the first time a PV effect in longitudinal nanowire junctions with decent fill factor (FF, 45%). Furthermore, the heterojunction has also shown an excellent, stable, highly reproducible material, having very fast activity designed for the exposure of visible light. Functional, or effective as possible of the device is essential to strongly improve its functionalities of material. The proposed oxide nanowire p-n junction provides advancement in the field of PV and optoelectronic devices by using inexpensive, stable, and earth-abundant metal oxides.
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