Abstract
To investigate the electrical properties at the single grainboundary of ZnO varistors, micro-electrodes were fabricated on the surface which was polished and thermally etched. Our micro-electrode had 2000 <TEX>$\AA$</TEX> silicon nitride layer between micro-electrode and ZnO surface. This layer was deposited by PECVD and etched by RIE after photoresistor pattering process using by mask 1. The metal patterning of micro-electrodes used lift-off method. We found that the breakdown voltage of single grainboundary is about 3.5∼4.2 V at 0.1 mA on I-V curves. Also, capacitance-voltage measurement at single grainboundary gave several parameters( <TEX>$N_{d}$</TEX>, <TEX>$N_{t}$</TEX>, <TEX>$\Phi$</TEX><TEX>$_{b}$</TEX>, t) which were related with grainboundary.ary.
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