Abstract
Cd(Zn)Se/ZnSSe/ZnMgSSe laser heterostructures with an asymmetrical ZnSSe/ZnSe supperlattice waveguide, and multiple (up to 9) electronically-coupled CdSe quantum dot sheets in the active region were designed and grown by molecular beam epitaxy. Internal quantum efficiency η i, internal loss α i , transparency threshold J T and characteristic gain ΓG 0 were found to be: 58.5%, 7 cm − 1 , 1.78 kW/cm 2, and 194 cm − 1 , respectively, in a laser heterostructure with 9 electronically-coupled CdSe quantum dot active layers. A violet-green integrated laser converter with the output pulse power up to 50 mW was fabricated on the basis of the Cd(Zn)Se/ZnSSe/ZnMgSSe quantum dot laser heterostructure. The heterostructures were optically pumped by emission of a violet ( λ = 416 nm) commercial InGaN/GaN pulsed laser diode. The ways for further laser threshold reduction and increasing the efficiency are discussed.
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