Abstract
For the first time, indium-tin-oxide (ITO) layers were deposited onto n-ZnMgSSe films by DC magnetron sputtering and ZnMgSSe metal-semiconductor-metal (MSM) photodetectors were fabricated. The Schottky barrier height of ITO on n-ZnMgSSe was determined to be about 0.65 eV. It was also found that we could achieve a photocurrent-to-dark current contrast higher than four orders of magnitude by applying a 10 V reverse bias. We also found that the maximum photoresponsivity at 400 nm is 0.27 A/W under a 5 V reverse bias. Such a value corresponds to an external quantum efficiency of 41.5%.
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