Abstract
Molecular beam epitaxial growth of Zn 1− x Mg x S alloy thin films on GaP (1 0 0) substrates is reported. In situ reflection high energy electron diffraction (RHEED) studies show that the alloys can be grown with stable zinc-blende structure up to x around 30%. For x>30%, a phase transition will occur at a critical thickness which is sensitively dependent on the composition x. Several Schottky barrier photodetectors using Zn 1− x Mg x S layer, with thickness less than the critical thickness, as active layer were fabricated. High ultra-violet responsivity and excellent visible rejection are achieved. The response curve of the Zn 0.43Mg 0.57S device offers a long wavelength cut-off at 295 nm and closely matches the erythemal action spectrum that describes human skin sensitivity to UV radiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
