Abstract
Ternary metal oxide, Zn2GeO4, In2Ge2O7, have potential applications in many research areas. Using a single chemical vapor deposition method, high-quality single crystalline Zn2GeO4 nanowire (NW) mats and In2Ge2O7 NW mats were synthesized on a large scale. Nanowires mats based ultraviolet photodetectors were fabricated on rigid silicon substrates. By simply transferring the nanowire mats to a transparent adhesive PET tape, flexible photodetectors were also fabricated. Both the rigid and flexible photodetectors exhibited excellent photoconductive performance in terms of high sensitivity to the UV light, excellent stability and reproducibility, and fast response and recovery time.
Highlights
Ultraviolet (UV) photodetectors have been a hot technology topic in recent years because of their wide applications in fields like stratospheric ozone layer monitoring, flame safeguard, fire control areas and optical communications [1, 2]
Combined the SAED and HRTEM data, we could deduce the formation of single crystalline Zn2GeO4 nanowire with the preferred growth direction along the [001] orientation
We investigated the mechanical stability of the device by bending repetitiously the device on the transparent adhesive PET tape (TAT) substrate
Summary
Ultraviolet (UV) photodetectors have been a hot technology topic in recent years because of their wide applications in fields like stratospheric ozone layer monitoring, flame safeguard, fire control areas and optical communications [1, 2]. Good crystallinity and excellent stability, binary metal oxide nanowires, such as ZnO [3], SnO2 [4, 5], and In2O3 [6] nanowires, have been widely studied for the fabrication of high performance UV photodetectors. Ternary oxides have the advantages of tuning their physical properties by varying the proportion of each component. They usually possess more superior performance in UV detection. It is a promising task to develop high efficient UV photodetectors based on new kinds of ternary oxides
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