Abstract
We have experimentally demonstrated a strong correlation between the electrical properties of Zn1−xTex Ovonic threshold switching (OTS) selector device and the material properties analysed by X-ray diffraction (XRD), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS). The correlation and the key material parameters determining the device performances were investigated. By comparing the experimental data with the calculation results from various analytical models previously developed for OTS materials, the electrical properties of the device were shown to be dependent on the key material parameters; the concentration of sub-gap trap states and the bandgap energy of the OTS material. This study also experimentally demonstrated that those key parameters have determined the device performance as expected from the analytical model. The origin of the OTS phenomenon and conduction mechanism were explained both experimentally and theoretically. This leads to better understanding of the conduction mechanism of OTS devices, and an insight for process improvement to optimize device performance for selector application.
Highlights
The density and performance of memory devices are the top priority concerns in the memory industry[1,2,3]
We have investigated the material characteristics and the device performance of Zn1−xTex binary Ovonic threshold switching (OTS) devices according to compositional change, using optical and electrical analysis methods
By comparing various analytical models, the electrical characteristics were best explained by an analytical model based on thermally assisted hopping conduction[14,19,20], showing good agreement with the measured data
Summary
The density and performance of memory devices are the top priority concerns in the memory industry[1,2,3] To maximize both density and performance of memory devices, the high-density X-point memory array structure that consists of 4F2 memory devices with 2-terminal access devices, known as selector devices, has been widely investigated[4,5,6,7,8]. In this structure, high density can be achieved by closely packing high-performance memory devices in number of word lines and bit lines. The origin of OTS phenomenon and the performance-determining material parameters has been experimentally confirmed
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