Abstract
A thin AlN buffer layer was proven to be effective on both sapphire A-face and sapphire C-face substrates for the preparation of high quality Zn-doped as well as undoped GaN. The nature of Zn-related luminescence centers and their density are strongly affected by growth conditions; especially by the substrate temperature, which must be lower than 950°C for the efficient formation of blue luminescence centers. Zn-doped GaN grown on a sapphire A-face was found to have a greater density of blue luminescence centers than that on a C-face, indicating that the A-face is superior to the C-face as a substrate.
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