Abstract
We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.