Abstract
We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region.
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