Abstract
High-power InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the output power of 1.5 mW at a forward current of 20 mA were fabricated successfully for the first time. This value of output power was the highest ever reported for blue LEDs. As an active layer, a Zn-doped InGaN layer was used for these DH LEDs. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6 V at 20 mA.
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