Abstract
Relatively shallow (2–10 μ) Zn diffusions into(1̄1̄1̄) Sb surfaces of undoped n-type InSb with Zn surface concentration exceeding 1020/cm3 exhibit lattice contractions of the order of 0.12%, high dislocation densities and mosaic structure in the diffused region. X-ray double-crystal spectrometer rocking curves suggest that preferential tilt of the(1̄1̄1̄) diffused planes by about 0.05° relative to the substrate occurs when the substrate is about 5° off(1̄1̄1̄) orientation. High-concentration Zn diffusions have yielded low quality diodes with zero bias impedances of only a few hundred ohms and poor photoresponse. On the other hand, surface concentrations less than 1019/cm3 have produced rocking curves characteristic of nearly perfect crystals and diodes having zero bias impedance values of the order of 104 Ω and good photoresponse.
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