Zn 0.76 Mg 0.24 O homojunction photodiode for ultraviolet detection

Abstract

Zn 0.76 Mg 0.24 O p-n photodiode was fabricated on (000l) Al2O3 substrate by plasma-assisted molecular beam epitaxy. Ni∕Au and In metals deposited using vacuum evaporation were used as p-type and n-type contacts, respectively. Current-voltage measurements on the device showed weak rectifying behavior. The photodetectors exhibited a peak responsivity at around 325nm. The ultraviolet-visible rejection ratio (R325nm∕R400nm) of four orders of magnitude was obtained at 6V bias. The photodetector showed fast photoresponse with a rise time of 10ns and fall time of 150ns. In addition, the thermally limited detectivity was calculated as 1.8×1010cmHz1∕2∕W at 325nm, which corresponds to a noise equivalent power of 8.4×10−12W∕Hz1∕2 at room temperature.