Zirconium Aided Epitaxial Growth of InxSey on InP(111) SubstratesSupported by the National Natural Science Foundation of China (Grant No. 11874233).

Abstract

Layered material indium selenide (InxSey) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400°C at a constant zirconium flux rate of 0.01 ML/min, the polymorphic InxSey layer emerges on top of the insulating ZrSe2 layer. Different archetypes, such as InSe, α-In2Se3 and β-In2Se3, are found in the InxSey layers. A negative magnetoresistance of 40% at 2K under 9T magnetic field is observed. Such an InxSey/ZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.