Abstract
CrSb (1 ML)/GaAs (5 nm) multilayers with period up to 4 have been grown on GaAs substrates by solid-source molecular-beam epitaxy at 250°C. Reflection high-energy electron diffraction reveals zincblende characteristics throughout the growth of multilayer structures. High-resolution cross-sectional transmission electron microscopy also indicates that the crystal structure of the multilayers is zincblende and with no dislocations at the interfaces. The presence of room-temperature ferromagnetism is confirmed by magnetization measurements.
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