Abstract
There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1−xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1−xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (∼10μm) zinc-blende and wurtzite AlxGa1−xN films were grown by PA-MBE on 2-in. GaAs (001) and GaAs (111)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1−xN wafers can be achieved by PA-MBE for a wide range of Al compositions.
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