Abstract
Nominally undoped ZnO nanorods, grown by a chemical method, have been post-treated to intentionally incorporate high concentrations of zinc vacancies and zinc interstitials and were studied with electron microscopy and low temperature photoluminescence spectroscopy. The Zni are related to the 3.405eV peak at 4.2K, verifying that Zni is a shallow donor lying 30meV below the conduction band minimum, while the acceptors VZn are related to the 3.308eV peak at 4.2K and have an activation energy of 123meV.
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