Abstract
This paper presents a review on recent developments and future trends in zinc oxide thin film transistors (ZnO TFTs) together with challenges involved in this technology. It highlights ZnO TFT as next generation choice over other available thin film transistor technology namely a – Si: H (amorphous hydrogenated silicon), poly-Si (polycrystalline silicon) and OTFT (organic thin film transistor). This paper also provides a comparative analysis of various TFTs on the basis of performance parameters. Effect of high –k dielectrics, grain boundaries, trap densities, and threshold voltage shift on the performance of ZnO TFT is also explained.
Highlights
The advancement in large area electronics is driving human civilization
The consumers which were earlier passive have become socially connected through various electronic gadgets like laptops, tablets, phablets, smart phone etc
The scenario changed drastically in last decade due to introduction of active matrix liquid crystal display (LCD) (AM-LCD) and active matrix OLED (AM-OLED) devices together with Micro Electro Mechanical System (MEMS) technology. All these display panels are driven by thin film transistors (TFTs) mostly using polycrystalline silicon or amorphous silicon (a-Si) as an active channel layer [2,3,4]
Summary
The advancement in large area electronics is driving human civilization. The consumers which were earlier passive have become socially connected through various electronic gadgets like laptops, tablets, phablets, smart phone etc. The scenario changed drastically in last decade due to introduction of active matrix LCD (AM-LCD) and active matrix OLED (AM-OLED) devices together with Micro Electro Mechanical System (MEMS) technology (especially smart phone and tablets) All these display panels are driven by thin film transistors (TFTs) mostly using polycrystalline silicon (poly-Si) or amorphous silicon (a-Si) as an active channel layer [2,3,4]. There are a lot of problems need to be solved in the TFTs, which use silicon as an active channel layer These TFTs (especially the a-Si ones) present some limitations like: low field effect mobility (~1 cm2/V-s), light sensitivity and light degradation. The process requires high temperature (~ 600 0C) anneal for re-crystallization
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