Abstract
We report the fabrication and characterization of zinc-indium-oxide films with similar electrical conductivity and better transparency in both the visible and infrared compared with indium–tin–oxide, a widely used transparent conductor in many technological applications. Dramatically superior transmission properties in the 1–1.5 μm range in particular make zinc–indium–oxide attractive for use in infrared devices, where transparent electrodes are required. Resisitivities as low as 400 μΩ cm result from doping with small quantities of Sn; Al, Ga, and Ge are also effective dopants. Deposition on glass and quartz substrates as amorphous films by pulsed laser deposition and dc reactive sputtering is described.
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