Abstract
Zinc-doped monoclinic gallium oxide (β-Ga2O3:Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. Infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga2O3:Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm−1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm−1, confirming the O-H assignment. A strong Ir4+ electronic transition at 5147.6 cm−1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir4+ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced an insulating material with a resistance above 1 TΩ.
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