Abstract
SiO2 spin-on films of various concentrations of 1, 2, 6, 22 and 36 at.% zinc have been fabricated and used for the p diffusion into undoped n-type InP. An increasing zinc concentration (N0) of the spin-on film leads to a higher atomic zinc concentration (NZn) and diffusion depth in InP. From the experimental results a distribution coefficient NZn/N0 of 0.012 has been determined. A higher atomic zinc concentration in InP results in a lower acceptor concentration. With additional heat treatment the electrical activity of zinc can be increased significantly.
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