Abstract
We report here the diffusion behavior of zinc in n-type GaSb in the temperature range of 450–540 °C. The diffusion was carried out in a closed box system using a zinc-gallium source. The diffusion profiles were obtained using secondary ion mass spectrometry. From the diffusion profiles, concentration dependent diffusion coefficients were calculated using Boltzman–Montano analysis. These data have been qualitatively interpreted in terms of the interstitial-substitutional diffusion model originally proposed for zinc diffusion in GaAs. Finally, diffused junction GaSb solar cells were fabricated and their performance evaluated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
