Abstract
A ternary Zn3As2–ZnAs2–GaAs source for the diffusion of Zn in GaAs has been developed by a low temperature sintering technique that does not require special safety precautions. Wafers diffused using this source remained free of damage. Doping concentrations and diffusion depths agree with the results of the best high temperature Ga/As/Zn diffusion sources.
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