Abstract
Indium phosphide (InP) colloidal quantum dots (CQDs) have generated great interest as next-generation light-emitting materials owing to their narrow emission spectra and environment-friendly components. The minimized surface defects is essential to achieve narrow full-width at half-maximum (FWHM) and high photoluminescence quantum yield (PLQY). However, InP CQDs are readily oxidized in ambient condition, which results in formation of oxidation defect states on the surface of InP CQDs. Herein, we introduce a strategy to successfully passivate the surface defects of InP core by zinc complexes. The zinc carboxylates passivation reduces FWHM of InP CQDs from 130 nm to 70 nm and increases PLQY from 1% to 14% without shelling. Furthermore, the photoluminescence (PL) peak has shifted from 670 nm to 510 nm with an increase of zinc carboxylates passivation, which suggests that excessive zinc carboxylates functions as a size-regulating reagent in the synthesis.
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