Abstract

The propagation of the Lamb-like modes along a silicon-on-insulator (SOI)/AlN thin supported structure was simulated in order to exploit the intrinsic zero group velocity (ZGV) features to design electroacoustic resonators that do not require metal strip gratings or suspended edges to confine the acoustic energy. The ZGV resonant conditions in the SOI/AlN composite plate, i.e. the frequencies where the mode group velocity vanishes while the phase velocity remains finite, were investigated in the frequency range from few hundreds of MHz up to 1900 MHz. Some ZGV points were found that show up mostly in low-order modes. The thermal behaviour of these points was studied in the −30 to 220 °C temperature range and the temperature coefficients of the ZGV resonant frequencies (TCF) were estimated. The behaviour of the ZGV resonators operating as gas sensors was studied under the hypothesis that the surface of the device is covered with a thin polyisobutylene (PIB) film able to selectively adsorb dichloromethane (CH2Cl2), trichloromethane (CHCl3), carbontetrachloride (CCl4), tetrachloroethylene (C2Cl4), and trichloroethylene (C2HCl3), at atmospheric pressure and room temperature. The sensor sensitivity to gas concentration in air was simulated for the first four ZGV points of the inhomogeneous plate. The feasibility of high-frequency, low TCF electroacoustic micro-resonator based on SOI and piezoelectric thin film technology was demonstrated by the present simulation study.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.