Abstract

Abstract This chapter discusses the following questions: • How the field-effect mechanism dynamically controls mobile electron and hole densities in semiconductors, • The quantum mechanical operation principles of FETs, • Fundamental quantum limits of operation of ballistic FETs, • Effect of scattering and drift/diffusion transport on the operation of FETs, and • How FETs in today’s CMOS and HEMT technologies are used for logic, memory, and communications, and the historical development that led to the current state of the art FET technologies.

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