Abstract
ABSTRACTA load network for zero voltage switching high efficiency power amplifier design consisting of a parallel coupled line has been demonstrated. The load network was able to present the terminations required for a zero voltage switching class‐E power amplifier load topology. Simulated time domain voltage and current waveforms for the designed power amplifier at the transistor output terminal proved the workings of the proposed load network topology. The fabricated power amplifier designed at 1.2 GHz with the proposed load network was measured with different levels of input rf power. At the designed input rf power of 30 dBm, the power amplifier recorded an output power of 42 dBm with a power added efficiency of 67%. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2926–2929, 2014
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