Abstract
In this paper, we remove the bounded total variation condition on the initial data and the restriction of the concentration of a fixed background charge being a constant in the paper “Relaxation of the Isothermal Euler–Poisson System to the Drift-Diffusion Equations,” (Quart. Appl. Math., 58 (2000), 511–521), and obtain the zero relaxation time limits to isothermal hydrodynamic model for semiconductor by using the varying viscosity method.
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