Abstract
We experimentally studied spin-transfer-torque induced magnetization oscillations in an asymmetric MgO-based magnetic tunnel junction device consisting of an in-plane magnetized free layer and an out-of-plane magnetized polarizer. A steady auto-oscillation was achieved at zero magnetic field and room temperature, with an oscillation frequency that was strongly dependent on bias currents, with a large frequency tunability of 1.39 GHz/mA. Our results suggest that this new structure has a high potential for new microwave device designs.
Highlights
Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer
A microwatt output power was demonstrated in MgO-based magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA).[11,12,13]
The Spin-torque oscillators (STO) configurations in these studies were undesirable for on-chip integration and other practical applications, as they all require an external magnetic field with a precisely controlled direction to generate large microwave emissions
Summary
Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer. Bin Fang,[1] Jiafeng Feng,[2] Huadong Gan,[3] Roger Malmhall,[3] Yiming Huai,[3] Rongxin Xiong,[1] Hongxiang Wei,2,a Xiufeng Han,[2] Baoshun Zhang,[1] and Zhongming Zeng1,a 1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road[398], Suzhou 215123, China 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 3Avalanche Technology, Fremont, California 94538, United States (Received 9 September 2016; accepted 17 November 2016; published online 5 December 2016)
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