Abstract
A method to acquire a zero dipole high-k/SiO2 interface has been proposed. We introduced Gd elements into HfO2 to compensate the VFB shift cause by interface dipoles with multiple Gd fractions and further inferred a composition of HfGdO gate dielectric layer with no interface dipoles. The physical and electrical results reveal that the band gap, conduction offset, and oxide charges are improved with increased Gd elements. With the extraction of electron effective mass and Schottky barrier of each HfGdO layer, the band structures were established, and the amount of Fermi level pinning and interface dipoles could be successfully quantified and separated by analyzing the dissimilitude of work functions obtained by different extractions. A Hf/Gd dual-sputtered power ratio of 150/43 was interpolated to realize a zero dipole interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
