Abstract
We describe measurements of diode leakage currents in p-n and p-i-n diodes formed along individual single-walled carbon nanotubes (SWNTs) in the ranges well below the direct detection limit. When cooled, these diodes exhibit leakage currents down in the range of 10−25 A or equivalent to 1 electron/19 days. To verify our measurement of such low leakage currents, we use the photovoltaic property under varying temperatures to extract the dark diode leakage currents. Since nanotubes are sensitive in the near IR spectrum, these diodes show promise as zero dark current noise, near-infrared detectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.