Abstract
A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal equivalent models are presented for different diode areas. Over the measured range of 200 to 400 GHz using a monolithic antenna structure, noise equivalent power values between 3-8 pW/Hz/sup 1/2/ are achieved. The current-voltage characteristics of the diode show weak temperature dependence over a measured range of 213-323 K.
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