Abstract
Self assembled InAs quantum dashes were grown by molecular beam epitaxy on In0.53Ga0.23Al0.24As lattice matched to InP. Using electron beam lithography and wet etching single dash structures were isolated for spectroscopic studies. At low temperatures emission lines associated with excitons and biexcitons confined in single dashes were observed. The Zeeman splitting of excitons are studied in magnetic fields up to 8 T in Faraday configuration. Corresponding g-factors vary between 1.5 to 2.2.
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