ZEEMAN EFFECT FOR ELECTRONS AND HOLES IN Ge/Si QUANTUM DOTS

Abstract

We investigate theoretically the Zeeman effect on the electron and hole states in quantum dots. In frame of tight-binding approach, we propose a method of calculating the g factor for localized states. The principal values of the g factor for the ground electron and hole states in the self-assembled Ge / Si quantum dot are calculated. We find the strong g factor anisotropy — the components gxx, gyy are one order smaller than the gzz component, gzz=15.71, gxx=1.14, and gyy=1.76. The analysis of the wave function structure shows that the g factor of hole are mainly controlled by the contribution of the state with Jz=±(3/2), where Jz is the angular momentum projection on the growth direction of the quantum dot. The g factor of localized electron in Ge / Si quantum dot is close to 2: gzz=2.0004 and gxx=gyy=1.9976.