Abstract
Presently high energy-density plasmas produced by gas discharges (DPP) are the most powerful EUV source for the next generation’s high volume semiconductor manufacturing(HVM). This paper describes the radiation process in Z-pinch plasmas based on non-equilibrium ionization process and the fundamental Z-pinch plasma physics. Several schemes to control the pinching process and plasma parameters are shown. Also the present status of EUV sources developments and the critical issues to develop the DPP based EUV sources are discussed.
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