Yttrium sesquioxide, Y 2O 3, thin films deposited on Si by ion beam sputtering: microstructure and dielectric properties

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Y 2O 3 thin films were in-situ deposited by ion beam sputtering on Si substrate. The influence of the deposition parameters are studied by X-ray diffraction, electrical measurements and high resolution transmission electron microscopy observations. The stress sate of the oxide layers is investigated by the sin 2ψ method as a function of the deposition parameters and the post-annealing treatments. Oxygen ion beam assisted deposition process or post-annealing of as-deposited thin films lead to the same relaxation of the internal compressive stress within the oxide layer. An SiO 2 layer sandwiched between Si and Y 2O 3 is always observed and should play a role both in the growing process and electrical properties of the MOS structure based on Y 2O 3 oxide layer. The results are interpreted in terms of diffusional process in the oxide, which are directly related to the temperature and the oxygen partial pressure during the growth process.