Abstract
The doping behaviors of Y-doped BaTiO 3 ceramics comparing with that of undoped one at different sintering temperature were studied. Sintering at low temperature, yttrium preferably occupies Ti-site; with the sintering temperature rise, it tends to occupy Ba-site and act as donor. The dense and semiconducting ceramics of Y-doped BaTiO 3 can be obtained when the sintering temperature above 1250 °C. Sintered at 1250 °C results in the sample with the maximum of lattice parameters for the minimum vacancy concentration.
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