Abstract
The yttrium iron garnet (YIG) thin films prepared by the sol-gel method and rapid thermal annealing (RTA) process for integrated inductor are investigated. The X-ray diffraction (XRD) results indicate that the YIG film annealed above 650 °C is poly-crystalline with single-phase garnet structure. Moreover, it can be found that the initial permeability μ i, saturation magnetization M S and coercivity H c of these YIG films increase with increasing RTA temperature. Low temperature annealing after crystallization can further improve the magnetic properties of YIG film. Thereby, a planar integrated inductor in the presence of Si substrate/SiO2 layer/Y2.8Bi0.2Fe5O12 thin film/Cu spiral coil structure is fabricated successfully by the standard IC processes. Due to the magnetic enhancement originated from YIG film, the inductance L and quality factor Q of the inductor with YIG film are improved in a certain frequency range.
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