Abstract
We conducted a detailed study of the yellow luminescence (YL) band that has a maximum of 2.19eV at 10K in undoped and N-doped ZnO layers grown on sapphire substrates. Important characteristics of this band and the related defect are established. The YL band is attributed to a transition between a shallow donor and an acceptor with an energy level ∼0.4eV above the valence band. Quenching of the YL intensity with activation energies of 85meV and 0.4eV is observed at temperatures above 100 and 320K, respectively. The YL band is possibly due to a defect complex that may include a Zn vacancy.
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