Yellow emission from vertically integrated Ga2O3 doped with Er and Eu electroluminescent film

Abstract

Yellow color from vertically integrated light emitting device (LED) was reported. The multilayer structured Er and Eu doped Ga2O3 films were deposited on sapphire and GaAs substrates by alternate-target pulsed laser deposition. The structure, surface morphology, and optical properties of the films were systematically investigated. Bright yellow electroluminescence originated from the combined simultaneous emission of excited Er3+ (529, 550 nm) and Eu3+ (615 nm) can be observed with the naked eyes at a low driven voltage of 10 V. Parameters of the yellow emission for the chromaticity diagram were calculated to be x = 0.4379, y = 0.5343. It is determined that the optically active Er and Eu ions are simultaneously activated by defect-assisted carrier recombination excitation. We believe that this work will provide a prospect for realizing low-voltage driven color LED using rare earth doped Ga2O3 films.