Abstract
Yttrium barium copper oxide (YBCO) film was synthesized by a metal-organic deposition (MOD) process with fluorine-free Y and Cu precursor. The precursor solution with Sm addition enabled further improvement of the thickness and uniformity of precursor films. The calcination and firing processes were studied, and the precursor film was successfully converted to dense and uniform YBCO film on LaAlO3 (LAO) substrate after annealing in a wet Ar and O2 atmosphere. The measured critical current density (J c) value was about 80 A/cm-w (2.66 MA/cm2). The trifluoroacetate (TFA) reduced MOD process has the advantage that it has a larger tolerance for variations in the gas flow rate and path. The results on a Sm-YBCO film deposited on LAO with a CeO2 buffer layer fabricated by MOD are also presented.
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