Abstract
YBaCuO films of about 1 /spl mu/m thickness have been deposited by metal organic chemical vapor deposition (MOCVD) on biaxially textured Ni-based substrates. Different buffer layers (MgO, YSZ, CeO/sub 2/), and also NiO epitaxially grown on Ni, have been tested with subsequent YBCO deposition in the same reactor. When using NiO as first buffer layer, Ni-based substrates were oxidized in a rapid thermal processing system or in a conventional furnace previous to deposition of the second buffer layer. In the present work, we study different conductor architectures from the point of view of T/sub c/, J/sub c/ (77K), epitaxial growth, and chemical stability of the structure.
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