Abstract
YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films can be deposited on substrates up to 20 cm /spl times/ 20 cm using thermal reactive co-evaporation with a linear reciprocating oxygen pocket. In order to coat larger area or in a continuous way, the substrate has to be moved through the deposition zone. Therefore, the substrate is fixed in a slide and shuttled by a transport system. On small samples critical current densities (J/sub c/) over 3 MA/cm/sup 2/ were achieved while on 10 cm /spl times/ 20 cm sapphire substrates a J/sub c/ of 2.2 MA/cm/sup 2/ could be reached. On ion-beam-assisted deposition (IBAD) buffered aluminum oxide ceramic we attain critical current densities of 1.4 MA/cm/sup 2/ and 1.5 MA/cm/sup 2/ on IBAD buffered metal tapes.
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