Abstract
Herein, Tungsten trioxide-gallium sulfide heterojunctions which are prepared by the thermal evaporation technique under a vacuum pressure of 10-5 mbar are employed as active media to fabricate a multifunctional device. The WO3/Ga2S3 (WG) heterojunctions which are deposited onto Yb substrates and top contacted with Au pads of areas of 1.5× 10 −2 cm2 displayed electronic hybrid device structure composed of two Schottky arms connected to a 𝑝𝑛 junction. The constructed Yb/WG/Au devices showed tunneling diode characteristics with current conduction dominated by thermionic emission and quantum mechanical tunneling. In additions, the capacitance-voltage characteristic curves indicated the formation of PMOS and NMOS under reverse and forwards biasing conditions demonstrating a metal oxide semiconductor fields effect (MOSFET) transistor characteristics. Moreover, the impedance spectroscopy tests on the devices have shown that the device can perform as tunable microwave resonator suitable for 5G technologies. The resonator showed frequency based capacitance tunability and displayed microwave band pass/reject filter characteristics. The microwave cutoff frequency of the Yb/WG/Au band filters reaches 9.65 GHz with voltage standing wave ratios of 1.06 and return loss factor of ~29 dB.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
