Abstract

Strong anti-Stokes bands observed in FT-Raman spectra of Y 2O 3, Gd 2O 3 and Lu 2O 3 are explained by NIR luminescence of Yb 3+ impurities present in sesquioxides after the excitation with the 1064 nm line of an Nd:YAG laser. Samples of Y 2O 3:Yb, Ga 2O 3:Yb, CeO 2:Yb, Gd 2O 3:Yb and Lu 2O 3:Yb were prepared by solution combustion synthesis procedure using urea. All materials were investigated by FT-Raman and FT-NIR spectroscopy and characterized by X-ray powder diffraction.

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